The topological soliton in Peierls semimetal Sb.

Sb is a three-dimensional Peierls insulator. The Peierls instability gives rise to doubling of the translational period along the [111] direction and alternating van der Waals and covalent bonding between (111) atomic planes. At the (111) surface of Sb, the Peierls condition is violated, which in theory can give rise to properties differing from the bulk. The atomic and electronic structure of the (111) surface of Sb have been simulated by density functional theory calculations. We have considered the two possible (111) surfaces, containing van der Waals dangling bonds or containing covalent dangling bonds. In the models, the surfaces are infinite and the structure is defect free. Structural optimization of the model containing covalent dangling bonds results in strong deformation, which is well described by a topological soliton within the Su-Schrieffer-Heeger model centered about 25 Å below the surface. The electronic states associated with the soliton see an increase in the density of states (DOS) at the Fermi level by around an order of magnitude at the soliton center. Scanning tunneling microscopy and spectroscopy (STM/STS) measurements reveal two distinct surface regions, indicating that there are different surface regions cleaving van der Waals and covalent bonds. The DFT is in good agreement with the STM/STS experiments.

VOx Phase Mixture of Reduced Single Crystalline V2O5: VO2 Resistive Switching.

The strongly correlated electron material, vanadium dioxide (VO2), has seen considerable attention and research application in metal-oxide electronics due to its metal-to-insulator transition close to room temperature. Vacuum annealing a V2O5(010) single crystal results in Wadsley phases (VnO2n+1, n > 1) and VO2. The resistance changes by a factor of 20 at 342 K, corresponding to the metal-to-insulator phase transition of VO2. Macroscopic voltage-current measurements with a probe separation on the millimetre scale result in Joule heating-induced resistive switching at extremely low voltages of under a volt. This can reduce the hysteresis and facilitate low temperature operation of VO2 devices, of potential benefit for switching speed and device stability. This is correlated to the low resistance of the system at temperatures below the transition. High-resolution transmission electron microscopy measurements reveal a complex structural relationship between V2O5, VO2 and V6O13 crystallites. Percolation paths incorporating both VO2 and metallic V6O13 are revealed, which can reduce the resistance below the transition and result in exceptionally low voltage resistive switching.

Superconducting Long-Range Proximity Effect through the Atomically Flat Interface of a Bi2Te3 Topological Insulator.

We report on structural and electronic properties of superconducting nanohybrids made of Pb grown in the ultrahigh vacuum on the atomically clean surface of single crystals of topological Bi2Te3. In situ scanning tunneling microscopy and spectroscopy demonstrated that the resulting network is composed of Pb-nanoislands dispersed on the surface and linked together by an amorphous atomic layer of Pb, which wets Bi2Te3. As a result, the superconducting state of the system is characterized by a thickness-dependent superconducting gap of Pb-islands and by a very unusual position-independent proximity gap between them. Furthermore, the data analysis and DFT calculations demonstrate that the Pb-wetting layer leads to significant modifications of both topological and trivial electronic states of Bi2Te3, which are responsible for the observed long-range proximity effect.

Engineering of Numerous Moiré Superlattices in Twisted Multilayer Graphene for Twistronics and Straintronics Applications.

Because of their unique atomic structure, 2D materials are able to create an up-to-date paradigm in fundamental science and technology on the way to engineering the band structure and electronic properties of materials on the nanoscale. One of the simplest methods along this path is the superposition of several 2D nanomaterials while simultaneously specifying the twist angle between adjacent layers (θ), which leads to the emergence of Moiré superlattices. The key challenge in 2D nanoelectronics is to obtain a nanomaterial with numerous Moiré superlattices in addition to a high carrier mobility in a stable and easy-to-fabricate material. Here, we demonstrate the possibility of synthesizing twisted multilayer graphene (tMLG) with a number of monolayers NL = 40-250 and predefined narrow ranges of θ = 3-8°, θ = 11-15°, and θ = 26-30°. A 2D nature of the electron transport is observed in the tMLG, and its carrier mobilities are close to those of twisted bilayer graphene (tBLG) (with θ = 30°) between h-BN layers. We demonstrate an undoubtful presence of numerous Moiré superlattices simultaneously throughout the entire tMLG thickness, while the periods of these superlattices are rather close to each other. This offers a challenge of producing a next generation of devices for nanoelectronics, twistronics, and neuromorphic computing for large data applications.

Deformation and fracture of crystalline tungsten and fabrication of composite STM probes.

Fracturing microscale constrictions in metallic wires, such as tungsten, platinum, or platinum-iridium, is a common fabrication method used to produce atomically sharp tips for scanning tunneling microscopy (STM), field-emission microscopy and field ion microscopy. Typically, a commercial polycrystalline drawn wire is locally thinned and then fractured by means of a dislocation slip inside the constriction. We examine a special case where a dislocation-free microscale constriction is created and fractured in a single crystal tungsten rod with a long side parallel to the [100] direction. In the absence of dislocations, vacancies become the main defects in the constriction which breaks under the tensile stress of approximately 10 GPa, which is close to the theoretical fracture strength for an ideal monocrystalline tungsten. We propose that the vacancies are removed early in the tensile test by means of deformation annealing, creating a defect-free tungsten constriction which cleaves along the W(100) plane. This approach enables fabrication of new composite STM probes which demonstrate excellent stability, atomic resolution and magnetic contrast that cannot be attained using conventional methods.

Oxidation of Nb(110): atomic structure of the NbO layer and its influence on further oxidation.

NbO terminated Nb(110) and its oxidation are examined by scanning tunneling microscopy and spectroscopy (STS). The oxide structures are strongly influenced by the structural and electronic properties of the underlying NbO substrate. The NbO is terminated by one-dimensional few-nanometer nanocrystals, which form an ordered pattern. High-resolution STS measurements reveal that the nanocrystals and the regions between the nanocrystals exhibit different electronic characters. Low-dosage oxidation, sufficient for sub-monolayer coverage of the NbO, with subsequent UHV annealing results in the formation of resolved sub-nanometer clusters, positioned in-between the nanocrystals. Higher dosage oxidation results in the formation of a closed Nb2O5-y layer, which is confirmed by X-ray photoelectron spectroscopy measurements. The pentoxide is amorphous at the atomic-scale. However, large scale (tens of nanometers) structures are observed with their symmetry matching that of the underlying nanocrystals.

Control of binding of C60 molecules to the substrate by Coulomb blockade.

We report on a transition in a monolayer of C60 molecules deposited on a WO2/W(110) substrate. The transition from a static state, where the molecules are rigidly bound to the surface by a coordination bond, to a state where the molecules are loosely bound to the surface by van der Waals force and rotate continuously, has been studied using scanning tunnelling microscopy (STM). The separation between the molecules and the surface increases by 1.2 Å across the transition. The transition from the static state into the rotating state takes place at 259 K. The energy of the spinning state with respect to the lowest energy state, having a single coordinated bond, can be obtained from the statistics of the molecules switching. The binding energy of the molecule in the spinning state can be easily altered by changing the polarity of the bias voltage applied between the STM tip and the surface. The binding energy decreases by 80 meV when the bias polarity of the sample changes from positive to negative with respect to the tip. The results are consistent with the Coulomb blockade model: when electrons travel from the surface to the C60 molecule, and then to the tip; charge accumulates on the molecule due to the Coulomb blockade. This increases the electrostatic interaction between the molecule's charge and a corresponding image charge generated on the metallic surface.

Surface modification on MoO2+x/Mo(110) induced by a local electric potential.

Oxygen adatoms on the MoO2+x/Mo(110) surface are observed to be removed when a sufficiently large bias is applied between the scanning tunneling microscope tip and the surface. Experimental observations, such as the bias polarity dependence of adatom removal and the observation of an intermediate state, indicate that the adatom penetrates the surface oxide layer. Through the comparison of finite element method simulations with various experimental relationships, the electric field is concluded to be the sole contributor to adatom penetration into the surface oxide layer. The energetic barrier to this process is estimated to be approximately 0.45 eV in magnitude. Furthermore, the resolution of this phenomenon is on the atomic scale: individual adatoms can undergo surface penetration whilst their nearest neighbour adatoms, separated by 5 Å, are unaffected. The mechanism reported here has the advantages of not strongly influencing the substrate and is exceptionally localised, which can be beneficial for the synthesis of single atom devices.

Fabrication of sharp atomic force microscope probes using in situ local electric field induced deposition under ambient conditions.

We demonstrate a simple method to significantly improve the sharpness of standard silicon probes for an atomic force microscope or to repair a damaged probe. The method is based on creating and maintaining a strong, spatially localized electric field in the air gap between the probe tip and the surface of conductive sample. Under these conditions, nanostructure growth takes place on both the sample and the tip. The most likely mechanism is the decomposition of atmospheric adsorbate with subsequent deposition of carbon structures. This makes it possible to grow a spike of a few hundred nanometers in length on the tip. We further demonstrate that probes obtained by this method can be used for high-resolution scanning. It is important to note that all process operations are carried out in situ, in air and do not require the use of closed chambers or any additional equipment beyond the atomic force microscope itself.

Correlation between charge-transfer and rotation of C60 on WO2/W(110).

Understanding molecular switching between different charge states is crucial to further progress in molecule-based nano-electronic devices. Herein we have employed scanning tunnelling microscopy to visualize different charge states of a single C60 molecule within a molecular layer grown on the WO2/W(110) surface. The results obtained demonstrate that individual C60 molecules within the layer switch between neutral and negatively charged states in the temperature range of 220-260 K over the time scale of the experiment. The charging of the C60 causes changes in the local density of electron states and consequently a variation in tunnelling current. Using density functional theory calculations, it was found that the charged state corresponds to the negatively charged C60(-), which has accepted an electron. The switching of the molecule into the charged state is triggered continuously by tunnelling electrons when the STM tip is static above an individual C60 molecule with a bias applied. Molecular movement accompanies the molecule's switching between these states.